Cross-temperature effect challenges of 3D TLC NAND Flash

CROSS-TEMPERATURE EFFECT CHALLENGES OF 3D TLC NAND FLASH

The Rise Of Rugged Edge Computing

As industries compete to capitalize on the abundance of data generated by intelligent, connected devices, implementation of an intelligent data 
strategy has become even more critical. Edge computing has played an instrumental role to address this demand, but the edge itself has continued 
to evolve with the ever-growing need for even more demanding, real-time computing. Rugged edge computing enables applications that require 
real-time, low latency data processing and storage to function reliably in volatile environments with wide cross-temperature demands that are not 
friendly to regular systems.

Cross-temperature effect

The demands for higher storage density forced the transition from planar (2D) MLC to vertically integrated 3D TLC NAND flash technology. However, 
despite the cost per bit advantage and the promises of better reliability figures measured during endurance and data retention tests in favor of the 
latter technology, there are some intrinsic concerns that require a detailed evaluation for Industrial applications. 

The voltage reference levels used both for verification in the program algorithm and for read operation are temperature dependent, therefore inducing 
a potentially high Fail Bits Count (FBC) when the memory is read at a temperature different to the one experienced for programming. Memory cells 
are constructed from various materials with different temperature coefficients of resistance (the degree of resistance that changes with temperature). 
As the temperature moves from low to high or high to low, the threshold voltage VTH has a more significant shift with temperature than the reference 
voltage VR. This temperature difference causes error bits to be generated when writing and reading at different temperatures.

More temperature sensitive materials in 3D TLC technology

In the transition to 3D TLC technology, the different materials in the memory cell’s stack have exacerbated the cross-temperature phenomenon. 
Indeed, 3D TLC NAND Flash is integrated with an undoped poly-crystalline silicon channel. Threshold voltage distributions after programming 
in MLC 2D and 3D TLC NAND Flash with cross-temperature fail bits. that features a totally different temperature sensitivity compared to the 
mono-crystalline p-doped silicon used in 2D MLC NAND Flash cells , resulting in a larger FBC under temperature variations.

SP Industrial SSD Solutions for Rugged Edge Computing with Wide cross-temperature

Applications in 5G infrastructure , UAVE (unmanned aerial vehicle) and Transportation requires rugged edge computing.

To meet the surging demand for rugged edge computing, our new NVMe Gen4x4 MEC3H0SW and SATA III 8Ch 2.5” SSD3F0RW Series with 
3D TLC flash technology bring low-latency, high-speed storage access and high capacity to the rugged edge.

The environments in which rugged edge computing operates are naturally not as stable or regulated as data centers. Factories and 
warehouses are plagued by hot and cold extremes, water and dirt are part of the job at manufacturing plants, and mobile environments 
routinely experience shock and vibration. Our MEC3H0SW and SSD3F0RW Series operate reliably in wide and harsh temperatures ranging 
from -40°C to 85°C. It also adopts a high-standard 12-layer PCB design and has no moving parts to maintain greater stability.

And, to counteract the unpredictable and volatile environments of rugged edge computing, our MEC3H0SW and SSD3F0RW Series is 
equipped with data protection technologies for extra security. It complies with TCG Opal 2.0 protocols, allowing all data to be stored in the 
SSD controller. Data is quickly encrypted and decrypted within the system, without affecting system performance, to ensure data security. 

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